29PL256N datasheet(22/74 Pages) SPANSION

22 / 74 page

S29PL-N MirrorBit

™ Flash Family

S29PL-N_00_A5 June 6, 2007

Data

Sheet

(Pre limin ar y)

7.2.2

Page Mode Read

The device is capable of fast page mode read and is compatible with the page mode Mask ROM read

operation. This mode provides faster read access speed for random locations within a page. The random or

initial page access is tACC or tCE and subsequent page read accesses (as long as the locations specified by

the microprocessor falls within that page) is equivalent to tPACC. When CE# is deasserted (= VIH), the

reassertion of CE# for subsequent access has access time of tACC or tCE. Here again, CE# selects the device

and OE# is the output control and should be used to gate data to the output inputs if the device is selected.

Fast page mode accesses are obtained by keeping Amax – A3 constant and changing A2 – A0 to select the

specific word within that page.

Address bits Amax – A3 select an 8-word page, and address bits A2 – A0 select a specific word within that

page. This is an asynchronous operation with the microprocessor supplying the specific word location. See

Table 7.3 for details on selecting specific words.

The device is automatically set to reading array data after device power-up. No commands are required to

retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded

Erase algorithm. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All

data is latched on the rising edge of WE# or CE#, whichever happens first.

Reads from the memory array may be performed in conjunction with the Erase Suspend and Program

Suspend features. After the device accepts an Erase Suspend command, the corresponding bank enters the

erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector

within the same bank. The system can read array data using the standard read timing, except that if it reads

at an address within erase-suspended sectors, the device outputs status data. After completing a

programming operation in the Erase Suspend mode, the system may once again read array data with the

same exception. After the device accepts a Program Suspend command, the corresponding bank enters the

program-suspend-read mode, after which the system can read data from any non-program-suspended sector

within the same bank.

Table 7.3 Word Selection within a Page

Word

Word 0

000

Word 1

001

Word 2

010

Word 3

011

Word 4

100

Word 5

101

Word 6

110

Word 7

111

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