GD50FFY120C5SF datasheet(4/9 Pages) STARPOWER

4 / 9 page

GD50FFY120C5SF

IGBT Module

10/17/2022

4/9

A01

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=50A,VGE=0V,Tj=25

1.85

2.30

IF=50A,VGE=0V,Tj=125

1.90

IF=50A,VGE=0V,Tj=150

1.95

Recovered Charge

VR=600V,IF=50A,

-di/dt=1400A/μs,VGE=-15V

Tj=25

6.3

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

1.67

Recovered Charge

VR=600V,IF=50A,

-di/dt=1400A/μs,VGE=-15V

Tj=125

10.1

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

2.94

Recovered Charge

VR=600V,IF=50A,

-di/dt=1400A/μs,VGE=-15V

Tj=150

11.5

μC

IRM

Peak Reverse

Recovery Current

Erec

Reverse Recovery

Energy

3.63

NTC Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC=100

oC,R100=493.3Ω

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

Module Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

RCC’+EE’

Module Lead Resistance, Terminal to Chip

1.80

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.512

0.793

K/W

RthCH

Case-to-Sink (per IGBT)

Case-to-Sink (per Diode)

0.197

0.306

0.020

K/W

Mounting Torque, Screw M5

3.0

6.0

N.m

Weight of Module

200

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