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GD50FSA120L2SF Datasheet(PDF) 2 Page - StarPower Europe AG |
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GD50FSA120L2SF Datasheet(HTML) 2 Page - StarPower Europe AG |
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2 / 9 page ![]() GD50FSA120L2SF IGBT Module ©2024 STARPOWER Semiconductor Ltd. 7/31/2024 2/9 B01 Absolute Maximum Ratings T H=25 oC unless otherwise noted IGBT Symbol Description Value Unit VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ±20 V IC Collector Current @ TH=60 oC 50 A ICRM Repetitive Peak Collector Current tp limited by Tvjop 100 A Diode Symbol Description Value Unit VRRM Repetitive Peak Reverse Voltage 1200 V IF Diode Continuous Forward Current 50 A IFM Repetitive Peak Forward Current tp limited by Tvjop 100 A Module Symbol Description Value Unit Tvjmax Maximum Junction Temperature 175 oC Tvjop Operating Junction Temperature -40 to +150 oC TSTG Storage Temperature Range -40 to +125 oC VISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V Note: Tvjop > 150 oC is allowed for operation at overload conditions. |
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