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GD50PIY120C6S Datasheet(PDF) 7 Page - StarPower Europe AG |
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GD50PIY120C6S Datasheet(HTML) 7 Page - StarPower Europe AG |
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7 / 13 page ![]() GD50PIY120C6S IGBT Module ©2016 STARPOWER Semiconductor Ltd. 1/22/2016 7/13 SN0A Module Characteristics T C=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit LCE Stray Inductance 60 nH RCC’+EE’ RAA’+CC’ Module Lead Resistance,Terminal to Chip 4.00 2.00 m Ω RthJC Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) Junction-to-Case (per IGBT-brake) Junction-to-Case (per Diode-brake) 0.512 0.793 0.813 0.685 1.134 K/W RthCH Case-to-Heatsink (per IGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (per IGBT-brake) Case-to-Heatsink (per Diode-brake) Case-to-Heatsink (per Module) 0.134 0.207 0.212 0.179 0.296 0.009 K/W M Mounting Torque, Screw:M5 3.0 6.0 N.m G Weight of Module 300 g |
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