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GD100FFX65C5SF Datasheet(PDF) 5 Page - StarPower Europe AG |
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GD100FFX65C5SF Datasheet(HTML) 5 Page - StarPower Europe AG |
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5 / 10 page ![]() GD100FFX65C5SF IGBT Module ©2020 STARPOWER Semiconductor Ltd. 7/15/2020 5/10 preliminary Module Characteristics T C=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit LCE Stray Inductance 19 nH RCC’+EE’ Module Lead Resistance, Terminal to Chip 1.80 mΩ RthJC Junction-to-Case (per IGBT) Junction-to-Case (per Diode) 0.452 0.768 K/W RthCH Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) 0.191 0.324 0.020 K/W M Mounting Torque, Screw M5 3.0 6.0 N.m G Weight of Module 200 g |
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