BAV102_BAV103_3

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 03 — 16 August 2007

3 of 10

NXP Semiconductors

BAV102; BAV103

Single general-purpose switching diodes

[1]

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

[1]

[2]

non-repetitive peak

forward current

square wave

[3]

9

A

3

A

-

1

A

total power dissipation

[2] -

400

mW

junction temperature

-

175

°C

ambient temperature

−65

+175

°C

storage temperature

−65

+175

°C

Table 6.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1] -

-

375

K/W

thermal resistance from

junction to tie-point

-

-

300

K/W

Table 8.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

[1]

-

-

1.0

V

-

-

1.25

V

reverse current

BAV102

-

-

100

nA

-

-

100

µA

BAV103

-

-

100

nA

-

-

100

µA

diode capacitance

-

-

5

pF

reverse recovery time

[2] --50

ns