74LVC3G04DP datasheet(6/15 Pages) NXP

6 / 15 page

74LVC3G04_5

Product data sheet

Rev. 05 — 5 October 2007

6 of 15

NXP Semiconductors

74LVC3G04

Triple inverter

[1]

All typical values are measured at VCC = 3.3 V and Tamb =25 °C.

11. Dynamic characteristics

[1]

Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.

[2]

tpd is the same as tPLH and tPHL.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

VOH

HIGH-level output voltage

VI =VIH or VIL

IO = −100 µA; VCC = 1.65 V to 5.5 V

VCC − 0.1

IO = −4 mA; VCC = 1.65 V

0.95

IO = −8 mA; VCC = 2.3 V

1.7

IO = −12 mA; VCC = 2.7 V

1.9

IO = −24 mA; VCC = 3.0 V

2.0

IO = −32 mA; VCC = 4.5 V

3.4

VOL

LOW-level output voltage

VI =VIH or VIL

IO = 100 µA; VCC = 1.65 V to 5.5 V

0.10

IO = 4 mA; VCC = 1.65 V

0.70

IO = 8 mA; VCC = 2.3 V

0.45

IO = 12 mA; VCC = 2.7 V

0.60

IO = 24 mA; VCC = 3.0 V

0.80

IO = 32 mA; VCC = 4.5 V

0.80

input leakage current

VI = 5.5 V or GND; VCC = 0 V to 5.5 V

±20

µA

IOFF

power-off leakage current

VCC = 0 V; VI or VO = 5.5 V

±20

µA

ICC

supply current

VI = 5.5 V or GND;

VCC = 1.65 V to 5.5 V; IO =0A

µA

∆ICC

additional supply current

per pin; VCC = 2.3 V to 5.5 V;

VI =VCC − 0.6 V; IO =0 A

5000

µA

Table 7.

Static characteristics …continued

At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ[1] Max

Unit

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

tpd

propagation delay

nA to nY; see Figure 7

[2]

VCC = 1.65 V to 1.95 V

1.0

3.5

8.0

1.0

9.5

VCC = 2.3 V to 2.7 V

0.5

2.2

4.4

0.5

5.4

VCC = 2.7 V

0.5

2.7

5.2

0.5

7.0

VCC = 3.0 V to 3.6 V

0.5

2.7

4.1

0.5

5.5

VCC = 4.5 V to 5.5 V

0.5

1.9

3.2

0.5

3.8

CPD

power dissipation

capacitance

VI = GND to VCC; VCC = 3.3 V

[3]

13.5

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