GD100CUY120C1S datasheet(4/9 Pages) STARPOWER

4 / 9 page

GD100CUY120C1S

IGBT Module

2/16/2016

4/9

SN0A

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=100A,VGE=0V,Tj=25

1.70

2.15

IF=100A,VGE=0V,Tj=125

1.65

IF=100A,VGE=0V,Tj=150

1.65

Recovered Charge

VR=600V,IF=100A,

-di/dt=2800A/

μs,V

GE=-15V

Tj=25

9.0

μC

IRM

Peak Reverse

Recovery Current

110

Erec

Reverse Recovery

Energy

3.32

Recovered Charge

VR=600V,IF=100A,

-di/dt=2800A/

μs,V

GE=-15V

Tj=125

16.2

μC

IRM

Peak Reverse

Recovery Current

120

Erec

Reverse Recovery

Energy

5.70

Recovered Charge

VR=600V,IF=100A,

-di/dt=2800A/

μs,V

GE=-15V

Tj=150

19.5

μC

IRM

Peak Reverse

Recovery Current

123

Erec

Reverse Recovery

Energy

7.13

Module Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.75

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.293

0.505

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.108

0.186

0.050

K/W

Terminal Connection Torque, Screw M5

Mounting Torque, Screw M6

2.5

3.0

5.0

N.m

Weight of Module

150

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