GD225HTY120C7S datasheet(4/9 Pages) STARPOWER

4 / 9 page

GD225HTY120C7S

IGBT Module

1/21/2016

4/9

SN0A

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=225A,VGE=0V,Tj=25

1.70

2.15

IF=225A,VGE=0V,Tj=125

1.65

IF=225A,VGE=0V,Tj=150

1.65

Recovered Charge

VCC=600V,IF=225A,

-di/dt=5750A/

μs,V

GE=-15V,

Tj=25

21.4

μC

IRM

Peak Reverse

Recovery Current

285

Erec

Reverse Recovery

Energy

11.4

Recovered Charge

VCC=600V,IF=225A,

-di/dt=5750A/

μs,V

GE=-15V,

Tj=125

40.9

μC

IRM

Peak Reverse

Recovery Current

304

Erec

Reverse Recovery

Energy

20.9

Recovered Charge

VCC=600V,IF=225A,

-di/dt=5750A/

μs,V

GE=-15V,

Tj=150

47.0

μC

IRM

Peak Reverse

Recovery Current

323

Erec

Reverse Recovery

Energy

23.8

NTC Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

∆R/R

Deviation of R100

TC=100

oC,R

100

=493.3Ω

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

Module Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

RCC’+EE’

Module Lead Resistance, Terminal to Chip

1.10

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.122

0.188

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.049

0.076

0.005

K/W

Terminal Connection Torque, Screw M6

Mounting Torque, Screw M5

3.0

6.0

N.m

Weight of Module

910

GD225HTY120C7S Datasheet(PDF) 4 Page - StarPower Europe AG

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