GD300HFX170C2S datasheet(4/9 Pages) STARPOWER

4 / 9 page

GD300HFX170C2S

IGBT Module

3/15/2019

4/9

preliminary

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Diode Forward

Voltage

IF=300A,VGE=0V,Tj=25

1.80

2.25

IF=300A,VGE=0V,Tj=125

1.90

IF=300A,VGE=0V,Tj=150

1.95

Recovered Charge

VR=900V,IF=300A,

-di/dt=5400A/

μs,V

GE=-15V

Tj=25

μC

IRM

Peak Reverse

Recovery Current

297

Erec

Reverse Recovery

Energy

32.2

Recovered Charge

VR=900V,IF=300A,

-di/dt=5400A/

μs,V

GE=-15V

Tj=125

116

μC

IRM

Peak Reverse

Recovery Current

357

Erec

Reverse Recovery

Energy

68.2

Recovered Charge

VR=900V,IF=300A,

-di/dt=5400A/

μs,V

GE=-15V

Tj=150

396

μC

IRM

Peak Reverse

Recovery Current

120

Erec

Reverse Recovery

Energy

81.6

Module Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.35

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.082

0.129

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.033

0.051

0.010

K/W

Terminal Connection Torque, Screw M6

Mounting Torque, Screw M6

2.5

3.0

5.0

N.m

Weight of Module

300

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