GD400CUX170C2S datasheet(4/9 Pages) STARPOWER

4 / 9 page

GD400CUX170C2S

IGBT Module

3/28/2021

4/9

preliminary

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=400A,VGE=0V,Tj=25

1.80

2.25

IF=400A,VGE=0V,Tj=125

1.90

IF=400A,VGE=0V,Tj=150

1.95

Recovered Charge

VR=900V,IF=400A,

-di/dt=8800A/μs,VGE=-15V

Tj=25

116

μC

IRM

Peak Reverse

Recovery Current

666

Erec

Reverse Recovery

Energy

63.8

Recovered Charge

VR=900V,IF=400A,

-di/dt=8800A/μs,VGE=-15V

Tj=125

187

μC

IRM

Peak Reverse

Recovery Current

662

Erec

Reverse Recovery

Energy

114

Recovered Charge

VR=900V,IF=400A,

-di/dt=8800A/μs,VGE=-15V

Tj=150

209

μC

IRM

Peak Reverse

Recovery Current

640

Erec

Reverse Recovery

Energy

132

Module Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.35

mΩ

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.063

0.105

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.022

0.037

0.010

K/W

Terminal Connection Torque, Screw M6

Mounting Torque, Screw M6

2.5

3.0

5.0

N.m

Weight of Module

300

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