GD400HFX65C8SN datasheet(4/9 Pages) STARPOWER

4 / 9 page

GD400HFX65C8SN

IGBT Module

3/19/2018

4/9

Preliminary

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=400A,VGE=0V,Tj=25

1.55

2.00

IF=400A,VGE=0V,Tj=125

1.50

IF=400A,VGE=0V,Tj=150

1.45

Recovered Charge

VR=300V,IF=400A,

-di/dt=6050A/

μs,V

GE=-15V

Tj=25

19.8

μC

IRM

Peak Reverse

Recovery Current

231

Erec

Reverse Recovery

Energy

3.96

Recovered Charge

VR=300V,IF=400A,

-di/dt=6050A/

μs,V

GE=-15V

Tj=125

33.0

μC

IRM

Peak Reverse

Recovery Current

308

Erec

Reverse Recovery

Energy

7.98

Recovered Charge

VR=300V,IF=400A,

-di/dt=6050A/

μs,V

GE=-15V

Tj=150

37.4

μC

IRM

Peak Reverse

Recovery Current

330

Erec

Reverse Recovery

Energy

9.13

Module Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.65

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.138

0.226

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.148

0.243

0.046

K/W

Terminal Connection Torque, Screw M5

Mounting Torque, Screw M5

2.5

3.5

N.m

Weight of Module

200

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