GD650HFX170P1S datasheet(4/10 Pages) STARPOWER

4 / 10 page

GD650HFX170P1S

IGBT Module

12/9/2018

4/10

preliminary

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=650A,VGE=0V,Tj=25

1.85

2.30

IF=650A,VGE=0V,Tj=125

1.98

IF=650A,VGE=0V,Tj=150

2.02

Recovered Charge

VR=900V,IF=650A,

-di/dt=5980A/

μs,V

GE=-15V

Tj=25

176

μC

IRM

Peak Reverse

Recovery Current

765

Erec

Reverse Recovery

Energy

87.4

Recovered Charge

VR=900V,IF=650A,

-di/dt=5980A/

μs,V

GE=-15V

Tj=125

292

μC

IRM

Peak Reverse

Recovery Current

798

Erec

Reverse Recovery

Energy

159

Recovered Charge

VR=900V,IF=650A,

-di/dt=5980A/

μs,V

GE=-15V

Tj=150

341

μC

IRM

Peak Reverse

Recovery Current

805

Erec

Reverse Recovery

Energy

192

NTC Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

∆R/R

Deviation of R100

TC=100

oC,R

100=493.3

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

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