SEMICONDUCT OR

1

HGTP3N60C3D, HGT1S3N60C3D,

HGT1S3N60C3DS

6A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

• 600V Switching SOA Capability

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Description

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS

are MOS gated high voltage switching devices combining the

best features of MOSFETs and bipolar transistors. These

devices have the high input impedance of a MOSFET and the

low on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

TA49113. The diode used in anti-parallel with the IGBT is the

development type TA49055.

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction losses

are essential.

Packaging

JEDEC TO-220AB

JEDEC TO-262AA

JEDEC TO-263AB

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

PACKAGING AVAILABILITY

PART NUMBER

PACKAGE

BRAND

HGTP3N60C3D

TO-220AB

G3N60C3D

HGT1S3N60C3D

TO-262AA

G3N60C3D

HGT1S3N60C3DS

TO-263AB

G3N60C3D

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.

Formerly Developmental Type TA49119.

GATE

COLLECTOR (FLANGE)

EMITTER

COLLECTOR

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

A

M

COLLECTOR

(FLANGE)

GATE

EMITTER

C

E

G

HGTP3N60C3D, HGT1S3N60C3D

HGT1S3N60C3DS

UNITS

600

V

Collector Current Continuous

C25

6A

C110

3A

24

A

±20

V

±30

V

18A at 480V

D

33

W

0.27

-40 to +150

260

8

µs

NOTE:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

May 1996

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright

File Number

4140