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STDRIVEG611 Datasheet(PDF) 1 Page - STMicroelectronics |
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STDRIVEG611 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 33 page  Features • High voltage rail up to 600 V • dV/dt transient immunity ±200 V/ns • Driver with separated sink and source path for optimal driving: – 2.4 A and 1.2 Ω sink – 1.0 A and 3.7 Ω source • High-side and low-side linear regulators for 6 V gate driving voltage • Fast high-side startup time: 5 µs • 45 ns propagation delay, 15 ns minimum output pulse • High switching frequency (> 1 MHz) • Embedded 600 V bootstrap diode • Full support of GaN hard-switching operation • Comparator for overcurrent detection with Smart Shutdown • UVLO function on VCC, VHS, and VLS • Separated logic inputs and shutdown pin • Fault pin for overcurrent, overtemperature and UVLO reporting • Stand-by function for low consumption mode • Separated PGND for Kelvin source driving and current shunt compatibility • 3.3 V to 20 V compatible inputs with hysteresis and pull-down Applications • Motor driver for home appliances, pumps, and compressors • Factory automation, servo, and industrial drives • E-bikes and power tools • Class D audio amplifiers • DC/DC and resonant converters, PFC, battery charger and adapters Description The STDRIVEG611 is a high-voltage half-bridge gate driver for N ‑channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode. High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN. The STDRIVEG611 features supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions and an overcurrent comparator with SmartSD. The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode. The STDRIVEG611 operates in the industrial temperature range, -40 °C to 125 °C. The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch. QFN 4 x 5 x 1 mm Product status link STDRIVEG611 Product label High voltage and high-speed half-bridge gate driver for GaN power switches STDRIVEG611 Datasheet DS14457 - Rev 2 - December 2024 For further information contact your local STMicroelectronics sales office. www.st.com |
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