TPCP8301 datasheet(5/7 Pages) TOSHIBA

5 / 7 page

TPCP8301

2006-11-17

RDS (ON) – Ta

IDR – VDS

Vth – Ta

PD – Ta

Common source

Pulse test

100

−80

−40

120

160

VGS = −2 V

VGS = −2.5 V VGS = −4.5 V

ID = −5 A

−1.3

Common source

= 25°C

Pulse test

0.2

0.4

0.6

0.8

1.0

1.2

−0.1

−100

−1

−10

−5

−3

−1

VGS = 0 V

Common source

= 25°C

VGS = 0 V

= 1 MHz

Ciss

Coss

Crss

100

1000

10000

−0.1

−1

−10

−100

−80

−40

160

120

−1.2

−1.0

−0.2

(1)

(4)

(3)

(2)

0.5

1.0

1.5

2.0

160

120

200

−2

−6

−8

−10

−4

−8

−12

−20

ID = −2.5 A

−0.6

−0.8

−0.4

Common source

VDS = −10 V

ID = −200 μA

Pulse test

−4

Common source

ID = −5 A

= 25°C

Pulse test

VDD = −16 V

VDS

−8

VDD = −16 V

VGS

−4

−8

−16

−4

Ambient temperature Ta (°C)

Drain

−source voltage VDS (V)

Drain

−source voltage VDS (V)

Capacitance – VDS

Ambient temperature Ta (°C)

Total gate charge Qg (nC)

Dynamic input/output

characteristics

Device mounted on a glass-epoxy

board (a)

(Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual

operation

(Note 3b)

Device mounted on a glass-epoxy

board (b)

(Note 2b)

(3) Single-device operation

(Note 3a)

(4) Single-device value at dual

operation

(Note 3b)

= 10 s

TPCP8301 Datasheet(PDF) 5 Page - Toshiba Semiconductor

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