GD660HTX75P7HB datasheet(4/11 Pages) STARPOWER

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GD660HTX75P7HB

IGBT Module

2/28/2022

4/11

B04

Tj=175

oC,VCC=400V,

VCEM≤750V

Diode Characteristics T

F=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=300A,VGE=0V,Tj=25

1.35

1.60

IF=300A,VGE=0V,Tj=150

1.30

IF=300A,VGE=0V,Tj=175

1.25

IF=660A,VGE=0V,Tj=25

1.70

IF=660A,VGE=0V,Tj=175

1.70

Recovered Charge

VR=400V,IF=450A,

-di/dt=5140A/μs,VGE=-15V,

LS=33nH,Tj=25

13.0

μC

IRM

Peak Reverse

Recovery Current

192

Erec

Reverse Recovery

Energy

4.17

Recovered Charge

VR=400V,IF=450A,

-di/dt=4530A/μs,VGE=-15V,

LS=33nH,Tj=150

26.0

μC

IRM

Peak Reverse

Recovery Current

240

Erec

Reverse Recovery

Energy

7.43

Recovered Charge

VR=400V,IF=450A,

-di/dt=4330A/μs,VGE=-15V,

LS=33nH,Tj=175

29.8

μC

IRM

Peak Reverse

Recovery Current

252

Erec

Reverse Recovery

Energy

8.34

NTC Characteristics T

F=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC=100

oC,R100=493.3Ω

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

GD660HTX75P7HB Datasheet(PDF) 4 Page - StarPower Europe AG

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