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GD820HTA75P6HT Datasheet(PDF) 3 Page - StarPower Europe AG |
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GD820HTA75P6HT Datasheet(HTML) 3 Page - StarPower Europe AG |
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3 / 11 page ![]() GD820HTA75P6HT IGBT Module ©2023 STARPOWER Semiconductor Ltd. 2/24/2023 3/11 Preliminary IGBT Characteristics T F=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation Voltage IC=450A,VGE=15V, Tj=25 oC 1.10 1.35 V IC=450A,VGE=15V, Tj=150 oC 1.15 IC=450A,VGE=15V, Tj=175 oC 1.15 IC=820A,VGE=15V, Tj=25 oC 1.30 IC=820A,VGE=15V, Tj=175 oC 1.50 VGE(th) Gate-Emitter Threshold Voltage IC=12.9mA,VCE=VGE, Tj=25 oC 5.5 6.5 7.0 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25 oC 1.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25 oC 400 nA RGint Internal Gate Resistance 1.0 Ω Cies Input Capacitance VCE=50V,f=100kHz, VGE=0V 72.3 nF Coes Output Capacitance 1.51 nF Cres Reverse Transfer Capacitance 0.32 nF QG Gate Charge VCE =400V,IC =450A, VGE=-15…+15V 4.77 μC td(on) Turn-On Delay Time VCC=400V,IC=450A, RG=2.4Ω, VGE=-8V/+15V, LS=24nH, Tj=25 oC 315 ns tr Rise Time 61 ns td(off) Turn-Off Delay Time 729 ns tf Fall Time 70 ns Eon Turn-On Switching Loss 12.4 mJ Eoff Turn-Off Switching Loss 18.3 mJ td(on) Turn-On Delay Time VCC=400V,IC=450A, RG=2.4Ω, VGE=-8V/+15V, LS=24nH, Tj=150 oC 338 ns tr Rise Time 74 ns td(off) Turn-Off Delay Time 826 ns tf Fall Time 151 ns Eon Turn-On Switching Loss 20.7 mJ Eoff Turn-Off Switching Loss 25.3 mJ td(on) Turn-On Delay Time VCC=400V,IC=450A, RG=2.4Ω, VGE=-8V/+15V, LS=24nH, Tj=175 oC 343 ns tr Rise Time 77 ns td(off) Turn-Off Delay Time 846 ns tf Fall Time 171 ns Eon Turn-On Switching Loss 25.0 mJ Eoff Turn-Off Switching Loss 27.3 mJ ISC SC Data tP≤6μs,VGE=15V, Tj=25 oC,VCC=400V, VCEM≤750V 4500 A |
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