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GD820HTX75P6HL Datasheet(PDF) 4 Page - StarPower Europe AG |
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GD820HTX75P6HL Datasheet(HTML) 4 Page - StarPower Europe AG |
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4 / 9 page ![]() GD820HTX75P6HL IGBT Module ©2019 STARPOWER Semiconductor Ltd. 7/24/2019 4/9 Diode Characteristics T F=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward Voltage IF=450A,VGE=0V,Tj=25 oC 1.40 1.65 V IF=450A,VGE=0V,Tj=150 oC 1.35 IF=450A,VGE=0V,Tj=175 oC 1.30 Qr Recovered Charge VR=400V,IF=450A, -di/dt=4500A/ μs,V GE=-8V Tj=25 oC 18.0 μC IRM Peak Reverse Recovery Current 225 A Erec Reverse Recovery Energy 6.30 mJ Qr Recovered Charge VR=400V,IF=450A, -di/dt=4500A/ μs,V GE=-8V Tj=150 oC 36.0 μC IRM Peak Reverse Recovery Current 315 A Erec Reverse Recovery Energy 11.7 mJ Qr Recovered Charge VR=400V,IF=450A, -di/dt=4500A/ μs,V GE=-8V Tj=175 oC 40.5 μC IRM Peak Reverse Recovery Current 333 A Erec Reverse Recovery Energy 13.5 mJ NTC Characteristics T F=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R25 Rated Resistance 5.0 k Ω ∆R/R Deviation of R100 TC=100 oC,R 100 =493.3Ω -5 5 % P25 Power Dissipation 20.0 mW B25/50 B-value R2=R25exp[B25/50(1/T2- 1/(298.15K))] 3375 K B25/80 B-value R2=R25exp[B25/80(1/T2- 1/(298.15K))] 3411 K B25/100 B-value R2=R25exp[B25/100(1/T2- 1/(298.15K))] 3433 K Module Characteristics T F=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit LCE Stray Inductance 8 nH RCC’+EE’ Module Lead Resistance, Terminal to Chip 0.75 m Ω △p △V/△t=10.0dm3/min,T F=75 oC 64 mbar p Maximum Pressure In Cooling Circuit 2.5 bar RthJF Junction-to-Cooling Fluid (per IGBT) Junction-to-Cooling Fluid (per Diode) 0.133 0.217 K/W M Terminal Connection Torque, Screw M4 1.8 2.2 N.m G Weight of Module 755 g |
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