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2SC4408 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # 2SC4408
Description  Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications
PDF  4 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC4408 Datasheet(HTML) 3 Page - Toshiba Semiconductor

  2SC4408 Datasheet HTML 1Page - Toshiba Semiconductor 2SC4408 Datasheet HTML 2Page - Toshiba Semiconductor 2SC4408 Datasheet HTML 3Page - Toshiba Semiconductor 2SC4408 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC4408
2006-11-10
3
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
VBE (sat) – IC
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
hFE – IC
Base-emitter voltage VBE (V)
IC – VBE
Collector-emitter voltage VCE (V)
Safe Operating Area
Common emitter
VCE = 2 V
0.001
−25
25
10
30
100
300
500
50
0.03
0.01
0.03
0.1
0.3
1
3
Ta = 100°C
5
Common emitter
IC/IB = 20
0.01
0.001 0.003
0.01
0.03
0.1
0.3
1
3
0.03
0.05
0.1
0.3
0.5
1
3
5
10
Ta = −25°C
25
100
5
*: Single nonrepetitive pulse Ta = 25°C
Curves must be derated linearly with increase in
temperature.
IC max (continuous)
IC max (pulsed)*
DC operation (Ta = 25°C)
0.03
0.1
0.3
1
3
10
30
100
0.05
0.1
0.3
0.5
1
3
5
10
100 ms*
10 ms*
1 ms*
VCEO max
Common emitter
VCE = 2 V
Ta = 100°C
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0.4
0.8
1.2
1.6
2.0
−25
25
Common emitter
IC/IB = 20
Ta = 100°C
0.001 0.003
0.01
0.03
0.1
0.3
1
3
0.003
0.005
0.01
0.03
0.05
0.1
0.3
0.5
1
−25
25
5
3
Common emitter Ta = 25°C
0
0
IB = 2 mA
100
0.4
0.8
1.2
1.6
2.0
1
2
3
4
5
10
20
30
15
4
6
50



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