2SC2712

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2712

Audio Frequency General Purpose Amplifier Applications

= 0.95 (typ.)

• Low noise: NF = 1dB (typ.), 10dB (max)

• Complementary to 2SA1162

• Small package

Characteristics

Symbol

Rating

Unit

Collector-base voltage

60

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

150

mA

Base current

30

mA

Collector power dissipation

150

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)