RoHS Device

Halogen Free

Page 1

Comchip Technology CO., LTD.

QW-JP148

SMD ESD Protection Diode

Features

- IEC 61000-4-2 (ESD) ±30kV (air/contact)

IEC 61000-4-4 (EFT) 80A (5/50ns)

IEC 61000-4-5 (Lightning) 60A (8/20µs)

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

Operating temperature range

TJ

°C

ESD

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

Peak pulse current

IPP

A

TP = 8/20µs

TP = 8/20µs

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

V

IT = 1mA

Reverse leakage current

IR

nA

VRWM = 4.5V

Clamping voltage

VC

V

IPP = 60A, TP = 8/20µs

V

Working peak reverse voltage

VRWM

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

4.5

4.7

120

TLP = 16A, TP = 0.2/100ns

VC

-55 to +125

±30

60

9

6.5

660

100

Clamping voltage

V

- ESD protection for one line with Bi-directional.

- Protect one I/O line or one power line.

- Fast turn-on and low clamping voltage.

Mechanical data

- Case: DFN1006-2L package,

molded plastic.

- Mounting position: Any.

REV:A

CPDQ4V5MASB-HF

11

Dimensions in inches and (millimeter)

DFN1006-2L

0.026(0.65)

0.023(0.59)

0.002(0.05)

Max.

0.041(1.05)

0.039(0.99)

0.026(0.65)

0.023(0.59)

0.021(0.53)

0.017(0.43)

0.011(0.27)

0.007(0.17)

0.026(0.65)

BSC

0.003(0.075)

REF

0.003(0.075)

0.007(0.175)

0.003(0.075)

0.007(0.175)

0.003(0.07)

REF

Pin 1

Pin 2

Circuit Diagram

8.0

Sorage temperature range

TSTG

°C

-55 to +150

Clamping voltage

VC

V

IPP = 10A, TP = 8/20µs

6