RoHS Device

Halogen Free

Page 1

Comchip Technology CO., LTD.

QW-JP158

SMD ESD Protection Diode

Features

- IEC 61000-4-2 (ESD) ±30kV (air/contact)

IEC 61000-4-4 (EFT) 80A (5/50ns)

IEC 61000-4-5 (Lightning) 7A (8/20µs)

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

Operating junction temperature range

TJ

°C

ESD

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

Peak pulse current

IPP

A

TP = 8/20µs

TP = 8/20µs

-55 to +125

±30

7

294

- ESD protection for one line with Bi-directional.

- Protect one I/O line or power line.

- Fast turn-on and low clamping voltage.

Mechanical data

- Case: DFN1006-2L package,

molded plastic.

- Mounting position: Any.

REV:C

CPDQ24VM-HF

Sorage temperature range

TSTG

°C

-55 to +150

Dimensions in inches and (millimeter)

DFN1006-2L

0.022(0.55)

0.018(0.45)

0.002(0.05)

Max.

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0.022(0.55)

0.018(0.45)

0.012(0.30)

0.008(0.20)

0.026(0.65)

BSC

0.002(0.05)

REF

0.003(0.07)

0.007(0.17)

0.003(0.07)

0.007(0.17)

0.002(0.05)

REF

Pin 1

Pin 2

Circuit Diagram

0.007(0.18)

0.005(0.12)

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

V

IT = 1mA

Reverse leakage current

IR

nA

VRWM = 24V

Clamping voltage

VC

V

IPP = 7A, TP = 8/20µs

V

Working peak reverse voltage

VRWM

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

24

25.5

34

27

TLP = 16A, TP = 100ns

VC

39

32.5

200

Clamping voltage

VC

IPP = 5A, TP = 8/20µs

V

42

31