3CK104D datasheet(1/2 Pages) ISC

Part #	3CK104D

Description	Silicon PNP Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon PNP Power Transistor

3CK104D

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -110V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): -0.3V(Max) @IC= -0.75A

APPLICATIONS

· Designed for use in industrial-military power amplifier and

switching circuit applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-110

V

VEBO

Emitter-Base Voltage

-5

V

ICM

Pluse Collector Current-Continuous

-2

A

PC

Total Power Dissipation

@ TC=25℃

10

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

15

℃

/W

3

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