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IXFN300N20X3 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN300N20X3 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISFM1313 eq IXFN300N20X3 N-Channel MOSFET www.iscsemi.com 1 DESCRIPTION · Drain Current -ID= 300A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) =3.5mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · PFC Circuits · AC and DC Motor Drives ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-continuous 300 A IDM Pulse Drain Current 700 A PD Total Dissipation@TC=25℃ 695 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ VISO Insulation Withstand Voltage (AC-RMS) 2500 V THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.18 ℃ /W D G S S SOT-227 package |
Similar Part No. - IXFN300N20X3 |
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Similar Description - IXFN300N20X3 |
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