SSM3J111TU datasheet(2/5 Pages) TOSHIBA

Part #	SSM3J111TU

Description	Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

SSM3J111TU

2007-11-01

Switching Time Test Circuit

Marking

Equivalent Circuit (top view)

Precaution

Vth can be expressed as the voltage between gate and source when the low operating current value is ID=−0.1mA for

this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower

voltage than Vth.

(The relationship can be established as follows: VGS (off) < Vth < VGS (on))

Take this into consideration when using the device.

Handling Precaution

When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is

protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

VDD = -10 V

RG = 4.7 Ω

D.U. <= 1%

VIN: tr, tf < 5 ns

Common Source

= 25°C

−2.5V

μs

VDD

OUT

ton

90%

10%

−2.5 V

0 V

90%

10%

toff

VDS (ON)

VDD

(b) VIN

(a) Test circuit

JJ4

SSM3J111TU Datasheet(PDF) 2 Page - Toshiba Semiconductor