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16FL2C41A Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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16FL2C41A Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page ![]() 16FL2C41A 2006-11-08 1 TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 16FL2C41A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 300 V Average Output Rectified Current : IO = 16 A Ultra Fast Reverse−Recovery Time : trr = 35ns (Max) Low Switching Loss and Output Noise ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 300 V Average Output Rectified Current (Full Sine Waveform) IO 16 A 80 (50Hz) Peak One Cycle Surge Forward Current (Non−Repetitive) IFSM 88 (60Hz) A Junction Temperature Tj −40~150 °C Strage Temperature Range Tstg −40~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). POLARITY MARKING Abbreviation Code Part No. 16FL2C 16FL2C41A Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA 12−16D1A Weight: 4.85 g (typ.) 16FL2C Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Similar Part No. - 16FL2C41A_06 |
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Similar Description - 16FL2C41A_06 |
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