HAF1004L datasheet(4/10 Pages) RENESAS

Part #	HAF1004L

Description	Silicon P Channel MOS FET Series Power Switching

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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4 / 10 page

HAF1004(L), HAF1004(S)

Rev.5.00, Apr.29.2003, page 4 of 10

Main Characteristics

Case Temperature Tc (

°C)

Power vs. Temperature Derating

–100

–20

–50

–10

–2

–5

–1

–0.5

–0.3

–0.5 –1

–2

–5

–10 –20

–50 –100

Drain Source Voltage VDS (V)

Maximum Safe Operation Area

–10

–8

–6

–4

–2

–4

–6

–8

–10

–10 V

= –3.5 V

Drain to Source Voltage VDS (V)

Typical Output Characteristics

0–1

–2

–3

–4

–5

°C

Tc = 75

°C

Tc = 75

°C

–25

°C

–25

°C

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

100

µs

Operation

(Tc

°C)

Ta = 25

°C

Operation in this area

is limited by RDS(on)

Thermal shut down

Operation area

–5

–4

–3

–2

–1

–8 V

–6 V

–4 V

Pulse Test

= –10 V

Pulse Test

100

150

200

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