DF3A3.6FE

2007-11-01

1

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF3A3.6FE

Product for Use Only as Protection against Electrostatic

Discharge (ESD).

* This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Characteristic

Symbol

Rating

Unit

Power dissipation

P

100

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Zener voltage

3.4

3.6

3.8

V

Dynamic impedance

―

―

130

Ω

Reverse current

―

―

10

μA

Terminal capacitance

(between Cathode and Anode)

―

110

―

pF

Guaranteed Level of ESD Immunity

Test Condition

ESD Immunity Level

IEC61000-4-2

(Contact discharge)

± 30 kV

Criterion: No damage to device elements

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

1-2SA1A

Weight: 0.0023 g (typ.)