DF3A8.2FV

2007-11-01

1

TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type

DF3A8.2FV

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

* This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

• Incorporating two devices in a single ultra-compact package reduces the

number of parts and lowers the mounting cost.

Characteristics

Symbol

Rating

Unit

Power dissipation

P*

150

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

*: Mounted on FR4 board (25.4 mm

× 25.4 mm × 1.6 mmt)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Zener voltage

7.7

8.2

8.7

V

Dynamic impedance

―

―

20

Ω

Reverse current

―

―

0.5

μA

Terminal capacitance

(between Cathode and Anode)

―

38

―

pF

Unit: mm

1. CATHODE1

2. CATHODE2

3. ANODE

VESM

JEDEC

⎯

JEITA

⎯

TOSHIBA

1-1Q1B

Weight: 0.0015g (typ.)

1

2

3

1.2±0.05

0.8±0.05

0.5mm

0.45mm

0.45mm

0.4mm