HN1B26FS datasheet(2/6 Pages) TOSHIBA

2 / 6 page

HN1B26FS

2007-11-01

Q1 Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cutoff current

ICBO

VCB = 60 V, IE = 0

⎯

0.1

μA

Emitter cutoff current

IEBO

VEB = 5 V, IC = 0

⎯

0.1

μA

DC current gain

hFE (Note)

VCE = 6 V, IC = 2 mA

120

⎯

400

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 100 mA, IB = 10 mA

⎯

0.1

0.25

Transition frequency

VCE = 10 V, IC = 1 mA

⎯

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

⎯

0.95

⎯

Q2 Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cutoff current

ICBO

VCB = −50 V, IE = 0

⎯

−0.1

μA

Emitter cutoff current

IEBO

VEB = −5 V, IC = 0

⎯

−0.1

μA

DC current gain

hFE (Note)

VCE = −6 V, IC = −2 mA

120

⎯

400

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = −100 mA, IB = −10 mA

⎯

−0.18

−0.3

Transition frequency

VCE = −10 V, IC = −1 mA

⎯

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

⎯

1.6

⎯

Note: hFE classification Y (F): 120~240, GR (H): 200~400

( ) marking symbol

Marking

Equivalent Circuit

(top view)

Type name

hFE Rank

123

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