HN7G10FE datasheet(2/7 Pages) TOSHIBA

2 / 7 page

HN7G10FE

2007-11-01

Q1 (transistor) Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cutoff current

ICBO

VCB = 15 V, IE = 0

⎯

0.1

μA

Emitter cutoff current

IEBO

VEB = 5 V, IC = 0

⎯

0.1

μA

DC current gain

hFE (Note 2) VCE = 2 V, IC = 10 mA

300

⎯

1000

VCE (sat) (1) IC = 10 mA, IB = 0.5 mA

⎯

Collector-emitter saturation voltage

VCE (sat) (2) IC = 200 mA, IB = 10 mA

⎯

110

250

Base-emitter saturation voltage

VBE (sat)

IC = 200 mA, IB = 10 mA

⎯

0.87

1.2

Note 2: hFE classification A: 300~600, B: 500~1000

Q2 (MOSFET) Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 10 V, VDS = 0

⎯

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 100 μA, VGS = 0

⎯

Drain cutoff current

IDSS

VDS = 20 V, VGS = 0

⎯

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 0.1 mA

0.7

⎯

1.3

Forward transfer admittance

⎪Yfs⎪

VDS = 3 V, ID = 10 mA

⎯

Drain-source ON-resistance

RDS (ON)

ID = 10 mA, VGS = 2.5 V

⎯

Input capacitance

Ciss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

11.0

⎯

Reverse transfer capacitance

Crss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

3.3

⎯

Output capacitance

Coss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

9.3

⎯

Turn-on time

ton

VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V

⎯

0.16

⎯

Switching time

Turn-off time

toff

VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V

⎯

0.19

⎯

μs

Switching Time Test Circuit

ton

toff

(b) VIN

VGS

VDS

2.5 V

VDD

VDS (ON)

10%

90%

(a) Switching time test circuit

2.5 V

OUT

VDD

μS

VIN

VDD = 3 V

D.U. <= 1%

VIN: tr, tf < 5 ns

(Zout = 50 Ω)

Common source

= 25°C

90%

10%

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