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JDV2S09FS Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # JDV2S09FS
Description  VCO for UHF band
PDF  3 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

JDV2S09FS Datasheet(HTML) 1 Page - Toshiba Semiconductor

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JDV2S09FS
2004-02-09
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S09FS
VCO for UHF band
• High capacitance ratio: C1V/C4V = 2.1 (typ.)
• Low series resistance: rs = 0.33 Ω (typ.)
• This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 µA
10
⎯
⎯
V
Reverse current
IR
VR = 10 V
⎯
⎯
3
nA
C1V
VR = 1 V, f = 1 MHz
9.7
⎯
11.1
Capacitance
C4V
VR = 4 V, f = 1 MHz
4.45
⎯
5.45
pF
Capacitance ratio
C1V/C4V
⎯
1.8
2.1
⎯
⎯
Series resistance
rs
VR = 1 V, f = 470 MHz
⎯
0.33
0.45
Ω
Note: Signal level when capacitance is measured. Vsig = 500 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
B
0.2
0.1±0.05
0.6±0.05
A
0.48+0.02
-0.03
±0.05
A
M
0.07


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