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2SB908 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SB908 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page ![]() 2SB908 2006-11-21 4 PC – Ta IC – VBE Collector-emitter voltage VCE (V) Safe Operating Area Ambient temperature Ta (°C) Base-emitter voltage VBE (V) 0 0 Common emitter VCE = −2 V 25 100 Tc = −55°C −4 −0.8 −1.6 −2.4 −3.2 −4.8 −1 −2 −3 −5 −4.0 0 0 200 240 120 160 80 8 4 16 12 (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink (1) (2) (3) 40 20 −10 −0.04 −1 −3 −10 −30 −100 −0.1 −0.3 −0.5 −1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* DC operation Tc = 25°C −3 −5 |
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