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TA8483CP Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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TA8483CP Datasheet(HTML) 6 Page - Toshiba Semiconductor |
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6 / 22 page ![]() TA8483CP 2006-3-2 6 Electrical Characteristics (Ta = 25°C, VCC = 24V) Characteristic Symbol Test Cir − cuit Test Condition Min. Typ. Max. Unit ICC (1) Chop on ― 40 51 ICC (2) Chop off ― 24 30 Current consumption ICC (3) 1 Off ― 22 28 mA IIN1 (L) VIN = 0V, IN−U, IN−V, IN−W −350 ― −100 IIN1 (OFF) VIN = 2.5V, IN−U, IN−V, IN−W ― 0 ― IIN1 (H) VIN = 5V, IN−U, IN−V, IN−W 100 ― 350 IIN2 (L) VIN = 0V, TSD−SEL, Tj = 150°C ― 0 ― Input current IIN2 (H) 2 VIN = 5V, TSD−SEL, Tj = 150°C ― 5.5 100 µA VIN1 (L) VCC = 20V, IN−U, IN−V, IN−W 0 ― 0.7 VIN1 (OFF) VCC = 20V, IN−U, IN−V, IN−W 1.9 ― 3.0 VIN1 (H) VCC = 20V, IN−U, IN−V, IN−W 4 ― 5.5 VIN2 (L) TSD −SEL, Tj = 150°C 0 ― 0.5 Input voltage VIN2 (H) 3 TSD −SEL, Tj = 150°C 1.1 ― 5.5 V Mid −point potential VN 4 0.95× VS / 2 VS / 2 1.05× VS / 2 V Pin voltage detection level VCMP 5 0.95× VS / 2 VS / 2 1.05× VS / 2 V Pin voltage detection output voltage VOV 5 IO = 50µA 4.3 ― 5.15 V Excess current detection level VRF 6 0.43 0.50 0.52 V Excess current detection output voltage VOC 6 IO = 50µA 4.3 ― 5.15 V VCC = 20V, IO = 1A ― 1.3 1.7 VSAT (H) 7 VCC = 20V, IO = 1.5A ― 1.6 2.1 VCC = 20V, IO = 1A ― 1.3 1.7 Output saturation voltage VSAT (H) 8 VCC = 20V, IO = 1.5A ― 1.5 2.0 V Upper side diode forward voltage VF (H) 9 IO = 1A ― 1.8 2.5 V Output leakage voltage IL (L) 10 VL = 35V ― 0 50 Upper side output B −E shunt circuit current IS 11 VCC = 35V ― 250 400 TSD (ON) ― 175 ― TSD (OFF) ― 150 ― Heat protection operative temperature TSD (HYS) ― Tj ― 25 ― °C ton ― 0.2 ― Output transmission time toff ― ― 6.1 ― µs tpLH ― 0.5 ― Comparator output transmitting duration tpHL ― ― 1.5 ― µs tr ― 1 ― Excess current detection duration tf ― ― 7 ― µs |
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