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ISC018N08NM6SC Datasheet(PDF) 10 Page - Infineon Technologies AG |
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ISC018N08NM6SC Datasheet(HTML) 10 Page - Infineon Technologies AG |
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10 / 15 page ![]() OptiMOS™ 6 Power‑Transistor, 80 V ISC018N08NM6SC Public Datasheet 10 Revision 1.0 https://www.infineon.com 2025‑02‑17 Diagram 13: Avalanche characteristics Diagram 14: Typ. gate charge I =f( ); =25 Ω; parameter: t R T V =f( ), =25 A pulsed, =25 °C; parameter: Q I T V Diagram 15: Drain‑source breakdown voltage Gate charge waveforms V =f( ); =1 mA T I ‑ AS AV GS j,start GS gate D j DD BR(DSS) j D 100 101 102 103 tAV [µs] 100 101 102 25 °C 100 °C 150 °C 0 10 20 30 40 50 60 70 Qgate [nC] 0 2 4 6 8 10 16 V 40 V 64 V 75 50 25 0 25 50 75 100 125 150 175 200 Tj [°C] 76 78 80 82 84 86 88 G a t e c h a r g e w a v e f o r m s |
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