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Semtech Corporation

Proprietary & Confidential

TDS2621LP

Final Datasheet: Rev. 2.0

Revision Date: 10/2/2024

semtech.com

TDS2621LP

Absolute Maximum ESD Rating

RATING

SYMBOL

VALUE

UNITS

Peak Pulse Power (t

p = 8/20µs)

P

PK

840

W

Peak Pulse Current (t

p = 8/20µs)

I

PP

24

A

Peak Pulse Current (t

p = 10/1000µs)

I

PP

1.3

A

ESD per IEC 61000-4-2 (Air)(1)

ESD per IEC 61000-4-2 (Contact)(1)

V

ESD

±25

kV

±20

kV

Operating Temperature

T

OP

-40 to +125

°C

Junction and Storage Temperature

T

J and TSTG

-55 to +150

°C

Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters specified in the

Electrical Characteristics section is not recommended.

Electrical Characteristics

T

A = 25°C unless otherwise specified. All data taken from Pin 1 to 2 unless otherwise specified.

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Reverse Stand-Off Voltage

V

RWM

26.4

V

Reverse Breakdown Voltage

V

BR

I

t = 1mA

31

32

33.2

V

Forward Voltage

V

F

I

t = 1mA, Pin 2 to Pin 1

0.6

V

Reverse Leakage Current

I

R

V

RWM = 26.4V

5

60

nA

Clamping Voltage(2)

V

C

I

PP=24A, tp = 8/20μs

32.7

35

V

Dynamic Resistance(2),(3)

R

DYN

tp = 8/20μs

32

mΩ

Junction Capacitance

C

J

V

R = 26.4V, f = 1MHz

86

pF

Notes:

1) ESD gun return path connected to ESD ground plane.

2) Parameter guaranteed by design.

3) Dynamic resistance measured between 1A and IPP (tp = 8/20µs)