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L6741TR Datasheet(PDF) 9 Page - STMicroelectronics

Part # L6741TR
Description  High current MOSFET driver
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6741TR Datasheet(HTML) 9 Page - STMicroelectronics

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L6741
Device description and operation
9/16
Bootstrap capacitor needs to be designed in order to show a negligible discharge due to the
High-Side MOSFET turn-on. In fact it must give a stable voltage supply to the High-Side
driver during the MOSFET turn-on also minimizing the power dissipated by the embedded
Boot Diode. Figure 5 gives some guidelines on how to select the capacitance value for the
bootstrap according to the desired discharge and depending on the selected mosfet.
Figure 5.
Bootstrap capacitance design
5.4
Gate driver voltage flexibility
L6741 allows the user to freely-select the gate drive voltage in order to optimize the effi-
ciency of the application.
The Low-Side MOSFET driving voltage depends on the voltage applied to VCC and can
range between 5V to 12V buses.
The High-Side MOSFET driving voltage depends on the voltage applied to PVCC (directly
impacting the bootstrap capacitor voltage) and can range between 5V to 12V buses.
5.5
Power dissipation
L6741 embeds high current drivers for both High-Side and Low-Side MOSFETs: it is then
important to consider the power that the device is going to dissipate in driving them in order
to avoid overcoming the maximum junction operative temperature.
Two main terms contribute in the device power dissipation: bias power and drivers' power.
Device Power (PDC) depends on the static consumption of the device through the
supply pins and it is simply quantifiable as follow:
Drivers' power is the power needed by the driver to continuously switch ON and OFF
the external MOSFETs; it is a function of the switching frequency and total gate charge
of the selected MOSFETs. It can be quantified considering that the total power PSW
dissipated to switch the MOSFETs dissipated by three main factors: external gate
resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance.
0.0
0.5
1.0
1.5
2.0
2.5
0
10
203040
5060708090
100
High-Side MOSFET Gate Charge [nC]
Cboot = 47nF
Cboot = 100nF
Cboot = 220nF
Cboot = 330nF
Cboot = 470nF
0
500
1000
1500
2000
2500
0.0
0.2
0.4
0.6
0.8
1.0
Boot Cap Delta Voltage [V]
Qg = 10nC
Qg = 25nC
Qg = 50nC
Qg = 100nC
P
DC
V
CC
I
CC
V
PVCC
I
PVCC
+
=



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