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L6741TR Datasheet(PDF) 9 Page - STMicroelectronics |
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L6741TR Datasheet(HTML) 9 Page - STMicroelectronics |
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9 / 16 page ![]() L6741 Device description and operation 9/16 Bootstrap capacitor needs to be designed in order to show a negligible discharge due to the High-Side MOSFET turn-on. In fact it must give a stable voltage supply to the High-Side driver during the MOSFET turn-on also minimizing the power dissipated by the embedded Boot Diode. Figure 5 gives some guidelines on how to select the capacitance value for the bootstrap according to the desired discharge and depending on the selected mosfet. Figure 5. Bootstrap capacitance design 5.4 Gate driver voltage flexibility L6741 allows the user to freely-select the gate drive voltage in order to optimize the effi- ciency of the application. The Low-Side MOSFET driving voltage depends on the voltage applied to VCC and can range between 5V to 12V buses. The High-Side MOSFET driving voltage depends on the voltage applied to PVCC (directly impacting the bootstrap capacitor voltage) and can range between 5V to 12V buses. 5.5 Power dissipation L6741 embeds high current drivers for both High-Side and Low-Side MOSFETs: it is then important to consider the power that the device is going to dissipate in driving them in order to avoid overcoming the maximum junction operative temperature. Two main terms contribute in the device power dissipation: bias power and drivers' power. ● Device Power (PDC) depends on the static consumption of the device through the supply pins and it is simply quantifiable as follow: ● Drivers' power is the power needed by the driver to continuously switch ON and OFF the external MOSFETs; it is a function of the switching frequency and total gate charge of the selected MOSFETs. It can be quantified considering that the total power PSW dissipated to switch the MOSFETs dissipated by three main factors: external gate resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance. 0.0 0.5 1.0 1.5 2.0 2.5 0 10 203040 5060708090 100 High-Side MOSFET Gate Charge [nC] Cboot = 47nF Cboot = 100nF Cboot = 220nF Cboot = 330nF Cboot = 470nF 0 500 1000 1500 2000 2500 0.0 0.2 0.4 0.6 0.8 1.0 Boot Cap Delta Voltage [V] Qg = 10nC Qg = 25nC Qg = 50nC Qg = 100nC P DC V CC I CC V PVCC I PVCC ⋅ + ⋅ = |
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