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ISL72026ASEHX Datasheet(PDF) 23 Page - Renesas Technology Corp |
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ISL72026ASEHX Datasheet(HTML) 23 Page - Renesas Technology Corp |
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23 / 28 page  FN8861 Rev. 1.00 Page 23 of 28 Jul 27, 2017 ISL72026ASEH 5. Die Characteristics 5. Die Characteristics Table 4. Die and Assembly Related Information Die Information Dimensions 2413µmx3322µm (95 milsx130.79 mils) Thickness: 305µm ±25µm (12 mils ±1 mil) Interface Materials Glassivation Type: 12kÅ Silicon Nitride on 3kÅ Oxide Top Metallization Type: 300Å TiN on 2.8µm AlCu In Bondpads, TiN has been removed. Backside Finish Silicon Process P6SOI Assembly Information Substrate Potential Floating Additional Information Worst Case Current Density 1.6x105A/cm2 Transistor Count 4055 Weight of Packaged Device 0.31 grams Lid Characteristics Finish: Gold Potential: Grounded, tied to package Pin 2 |
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