R34DS0003EU0504 Rev.5.04

Page 21

Jan 31, 2025

ISL71043M, ISL71041M Datasheet

6.2

Single-Event Effects Testing

The intense heavy ion environment encountered in space applications can cause a variety of Single-Event Effects

(SEE). SEE can lead to system-level performance issues including disruption, degradation, and destruction. For

predictable and reliable space system operation, individual electronic components should be characterized to

determine their SEE response. SEE testing was performed on the ISL71043M only and the results extend to

include the ISL71041M because the differences between the parts are so slight. Any differences between the

parts were determined to be benign in previous testing. The following is a summary of the ISL71043M SEE

testing.

6.2.1

SEE Test Facility

Testing was performed at the Texas A&M University (TAMU) Cyclotron Institute heavy ion facility on April 4, 2019.

The overall test setup includes the test jig containing four evaluation boards mounted and wired through a 20ft

cable to the data room. The end of the 20ft cable in the data room was connected to a switchboard. The

switchboard was wired to the power supplies and monitoring equipment/scopes. The signals from the switchboard

were connected to two LeCroy oscilloscopes, one set to capture transients due to pulse-width change and the

Gate VOL

VOL

100mA

Bias

0.442

0.409

0.396

0.386

0.382

0.383

V

GND

0.439

0.432

0.431

0.429

0.428

0.434

V

8mA

Bias

0.038

0.036

0.035

0.034

0.034

0.034

V

GND

0.038

0.037

0.037

0.037

0.037

0.038

V

Table 5. ISL71043M Response of Key Parameters vs TID (0, 10, 20, 30krad(Si))

Parameter

Symbol

Condition

Bias

0krad(Si)

10krad(Si)

20krad(Si)

30krad(Si)

Unit

Start-Up Current

IDDSu

13.2V

Biased

80.799

80.614

80.451

80.350

μA

Grounded

80.546

80.406

80.282

80.212

μA

Operating Current

IDDOp

9V

Biased

2.555

2.548

2.543

2.539

mA

Grounded

2.565

2.560

2.556

2.552

mA

12V

Biased

2.543

2.536

2.531

2.527

mA

Grounded

2.554

2.548

2.544

2.540

mA

13.2V

Biased

3.249

3.249

3.246

3.232

mA

Grounded

3.263

3.259

3.263

3.243

mA

Frequency

Freq

13.2V

Biased

50.783

50.787

50.787

50.770

kHz

Grounded

50.803

50.805

50.802

50.782

kHz

Frequency

Accurracy

Freq_PSRR

Biased

-0.039

-0.025

0.010

-0.007

%

Grounded

-0.035

-0.042

-0.039

-0.047

%

Voltage Reference

VREF

1mA

Biased

4.988

4.988

4.987

4.988

V

Grounded

4.994

4.994

4.993

4.994

V

10mA

Biased

4.980

4.980

4.979

4.979

V

Grounded

4.987

4.987

4.986

4.986

V

Error Amp

Reference

EA_VREF

12V

Biased

2.500

2.499

2.499

2.499

V

Grounded

2.501

2.502

2.502

2.502

V

Table 4. ISL71041M Response of Key Parameters vs TID (Cont.)

Parameter

Symbol

Condition

Bias

0krad(Si)

10krad(Si)

20krad(Si)

30krad(Si)

40krad(Si)

50krad(Si)

Unit