Z00607MN datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

Z00607

Characteristcs

3/7

Figure 1.

Maximum power dissipation

versus RMS on-state current

(full cycle)

Figure 2.

Relative variation of gate trigger

current, holding current and

latching current versus junction

temperature (typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

P(W)

(A)

T(RMS)

-40

-20

100

120

0.0

0.5

1.0

1.5

2.0

2.5

I, I , I [T ] /

GTHL

, I , I [T =25°C]

GTHL

T (°C)

IGT

IH &IL

Figure 3.

Surge peak on-state current versus

number of cycles

Figure 4.

Non-repetitive surge peak

on-state current for a sinusoidal

pulse with width tp < 10 ms and

corresponding value of I2t

100

1000

One cycle

t=20ms

(A)

TSM

Number of cycles

Non repetitive

T initial = 25°C

Repetitive

= 25°C

amb

0.01

0.10

1.00

10.00

0.1

1.0

10.0

100.0

200.0

t (ms)

(A), I t (A s)

TSM

dI/dt limitation:

20A/µs

T initial = 25°C

ITSM

Figure 5.

On-state characteristics

(maximum values)

Figure 6.

Relative variation of critical rate

of decrease of main current versus

(dV/dt)c (typical values)

(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.1

1.0

10.0

(V)

T =

max.

T = 25°C

T =max.

V =0.95 V

R =420 m

0.1

1.0

10.0

0.0

2.0

4.0

6.0

8.0

10.0

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

(dV/dt)c (V/µs)

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