TSM4414CSRL datasheet(2/6 Pages) TSC

2 / 6 page

TSM4414

30V N-Channel MOSFET

2/6

Version: Preliminary

Electrical Specifications

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

1.4

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 24V, VGS = 0V

IDSS

1.0

µA

On-State Drain Current

VDS ≥ 5V, VGS = 10V

ID(ON)

VGS = 10V, ID = 8.5A

Drain-Source On-State Resistance

VGS = 4.5V, ID = 5A

RDS(ON)

mΩ

Forward Transconductance

VDS = 5V, ID = 5A

gfs

Diode Forward Voltage

IS = 1A, VGS = 0V

VSD

0.76

1.0

Dynamic

Total Gate Charge

4.52

Gate-Source Charge

Qgs

1.24

Gate-Drain Charge

VDS = 15V, ID = 8.5A,

VGS = 10V

Qgd

1.68

Input Capacitance

Ciss

400.96

Output Capacitance

Coss

100.47

Reverse Transfer Capacitance

VDS = 15V, VGS = 0V,

f = 1.0MHz

Crss

71.82

Switching

Turn-On Delay Time

td(on)

7.42

Turn-On Rise Time

3.41

Turn-Off Delay Time

td(off)

20.4

Turn-Off Fall Time

VDD = 15V, RL = 2.2Ω,

ID = 1A, VGEN = 10V,

RG = 6Ω

3.01

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

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