TSM4426CSRL datasheet(2/6 Pages) TSC

2 / 6 page

TSM4426

20V Dual N-Channel MOSFET

2/6

Version: A07

Electrical Specifications

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

0.6

Gate Body Leakage

VGS = ±12V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 20V, VGS = 0V

IDSS

1.0

On-State Drain Current

VDS =5V, VGS = 4.5V

ID(ON)

VGS = 4.5V, ID = 8.0A

Drain-Source On-State Resistance

VGS = 2.5V, ID = 6.0A

RDS(ON)

mΩ

Forward Transconductance

VDS = 10V, ID = 6A

gfs

Diode Forward Voltage

IS = 1.7A, VGS = 0V

VSD

0.7

1.2

Dynamic

Total Gate Charge

4.86

Gate-Source Charge

Qgs

0.92

Gate-Drain Charge

VDS = 10V, ID = 8A,

VGS = 4.5V

Qgd

1.4

Input Capacitance

Ciss

562

Output Capacitance

Coss

106

Reverse Transfer Capacitance

VDS = 8V, VGS = 0V,

f = 1.0MHz

Crss

Switching

Turn-On Delay Time

td(on)

8.1

Turn-On Rise Time

9.95

Turn-Off Delay Time

td(off)

21.85

Turn-Off Fall Time

VDD = 10V, RL = 10Ω,

ID = 1A, VGEN = 4.5V,

RG = 6Ω

5.35

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

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