2N5415S datasheet(2/4 Pages) STMICROELECTRONICS

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ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Mi n.

Typ.

Max.

Unit

I CBO

Collector Cutoff Current

(IE =0)

VCB = – 175 V

– 50

µA

I CEO

Collector Cutoff Current

(IB =0)

VCE = – 150 V

– 50

µA

I EBO

Emitter Cutoff Current

(IC =0)

VEB =– 4 V

– 20

µA

V( BR)CEO *

Collector-emitter

Breakdown Voltage

(IB =0)

I C =– 2 mA

– 200

VCE(sat)*

Collector-emitter

Saturation Voltage

I C = – 50 mA

I B = – 5 mA

– 2.5

VBE *

Base-Emitter Voltage

IC = – 50 mA

VCE = – 10 V

– 1.5

h FE*

DC Current Gain

I C =– 50 A

VCE = – 10 V

150

f T

Transition Frequency

I C =– 10 mA

f= 5 MHz

VCE =– 10 V

MHz

C CBO

Collector-base

Capacitance

IE =0

f= 1 MHz

VCB =– 10 V

* Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

THERMAL DATA

Rth j-cas e

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

17.5

175

°C/W

2N5415S

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