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STD12NF06 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STD12NF06
Description  N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™II Power MOSFET
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD12NF06 Datasheet(HTML) 3 Page - STMicroelectronics

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STD12NF06 - STD12NF06-1
Electrical ratings
3/14
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
60
V
VDGR
Drain-gate voltage (RGS = 20KΩ)60
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
12
A
ID
Drain current (continuous) at TC=100°C
8.5
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
48
A
PTOT
Total dissipation at TC = 25°C
30
W
Derating factor
0.2
W/°C
dv/dt (2)
2.
ISD ≤12A, di/dt ≤200A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX
Peak diode recovery voltage slope
15
V/ns
EAS
(3)
3.
Starting TJ = 25
oC, I
D = 6A, VDD = 30V
Single pulse avalanche energy
140
mJ
Tstg
Storage temperature
-55 to 175
°C
TJ
Max. operating junction temperature
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case Max
5
°C/W
RthJA
Thermal resistance junction-ambient Max
100
°C/W
Tl
Maximum lead temperature for soldering
purpose
275
°C



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