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STM32F071C8T7 Datasheet(PDF) 53 Page - STMicroelectronics |
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STM32F071C8T7 Datasheet(HTML) 53 Page - STMicroelectronics |
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53 / 121 page ![]() DocID025451 Rev 3 53/121 STM32F071CB STM32F071RB STM32F071VB STM32F071V8 Electrical characteristics 96 6.3.4 Embedded reference voltage The parameters given in Table 27 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 23: General operating conditions. 6.3.5 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 13: Current consumption measurement scheme. All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to CoreMark code. VPVD6 PVD threshold 6 Rising edge 2.66 2.78 2.9 V Falling edge 2.56 2.68 2.8 V VPVD7 PVD threshold 7 Rising edge 2.76 2.88 3 V Falling edge 2.66 2.78 2.9 V VPVDhyst(1) PVD hysteresis - 100 - mV IDD(PVD) PVD current consumption - 0.15 0.26(1) µA 1. Guaranteed by design, not tested in production. Table 26. Programmable voltage detector characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Table 27. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.16 1.2 1.25 V tSTART ADC_IN17 buffer startup time -- - 10(1) µs tS_vrefint ADC sampling time when reading the internal reference voltage - 4(1) 1. Guaranteed by design, not tested in production. -- µs ΔVREFINT Internal reference voltage spread over the temperature range VDDA = 3 V - - 10(1) mV TCoeff Temperature coefficient - - 100(1) - 100(1) ppm/°C |
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