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TSM12N02 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # TSM12N02
Description  20V N-Channel MOSFET
PDF  6 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM12N02 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM12N02
20V N-Channel MOSFET
1/6
Version: A07
TO-252
Features
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
●
PA Switch
Ordering Information
Part No.
Package
Packing
TSM12N02CP RO
TO-252
T&R
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current, VGS @4.5V.
ID
12
A
Pulsed Drain Current, VGS @4.5V
IDM
30
A
Continuous Source Current (Diode Conduction)
a,b
IS
1.7
A
Ta = 25
oC
60
Maximum Power Dissipation
Ta = 70
oC
PD
23
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
oC
Thermal Performance
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8” from case)
TL
10
S
Junction to Case Thermal Resistance
RӨJC
2.2
oC/W
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
50
oC/W
Notes:
a. Maximum DC current limited by the package
b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec.
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
ID (A)
30 @ VGS = 10V
8
20
40 @ VGS = 4.5V
6
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
N-Channel MOSFET


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