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MMBT3906 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MMBT3906 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page ![]() Pb RoHS COMPLIANCE RoHS COMPLIANCE MMBT3906 0.3 Watts PNP Plastic-Encapsulate Transistors SOT-23 Features As complementary type, the NPN transistor MMBT3904 is recommended Epitaxial planar die construction Marking: 2A Dimensions in inches and (millimeters) Maximum Ratings TA=25 oC unless otherwise specified Type Number Symbol Value Units Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current - continuous IC -0.2 A Collector Power dissipation PC 0.3 W ELECTRICAL CHARACTERISTICS Parameter Symbol MIN MAX Units Collector-base breakdown voltage IC=-10uA, Ie=0 V(BR)CBO -40 V Collector-emitter breakdown voltage IC=-1mA, IB=0 V(BR)CEO -40 V Emitter-base breakdown voltage IE=-10uA, IC=0 VBE(ON) -5 V Collector cut-off current VCB=-40V IE=0 ICBO -0.1 uA Collector cur-off current VCE=-30V VBE(off)=-3V ICEX -50 nA Emitter cut-off current VEB=--5V IC=0 IEBO -0.1 DC current gain VCE=-1V IC=-10mA hFE(1) 100 300 VCE=-1V IC=-50mA hFE(2) 60 VCE=-1V IC=-100mA hFE(3) 30 Collector-emitter saturation voltage IC=-50mA, IB=-5mA VCE(sat) -0.4 V Base-emitter saturation voltage IC=-50mA, IB=-5mA VBE(sat) -0.95 V Transition frequency VCE=-20V IC=-10mA f=100MHz fT 250 MHz Delay time VCC=-3V, VBE=-0.5V IC=-10mA td 35 nS Rise time IB1 =-1.0mA tr 35 nS Storage time VCC=-3V, IC=-10mA ts 225 nS Fall time IB1= IB2=-1.0mA tf 75 nS Operating and Storage Temperature Range TJ, TSTG -55 to + 150 oC CLASSIFICATION OF hFE1 Rank O Y Range 100-200 200-300 Version: A07 |
Similar Part No. - MMBT3906 |
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Similar Description - MMBT3906 |
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