SILICON CARBIDE

SCHOTTKY BARRIER DIODE

SML02SC06D2A / SML02SC06D2B

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Semelab

Telephone:

Fax:

+44 (0) 1455 556565

+44 (0) 1455 552612

Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

Document Number:

Issue:

Page:

10003

2

2 of 5

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Units

VF

Diode Forward Voltage

IF = 2A

TJ = 25°C

1.5

1.8

V

IF = 2A

TJ = 175°C

1.8

2.4

IR

Leakage Current

VR = 600V

TJ = 25°C

50

µA

VR = 600V

TJ = 175°C

100

DYNAMIC CHARACTERISTICS

QC(4)

Total Capacitive Charge

VR = 600V

IF = 2A

4.8

nC

di/dt = 500A/µs

TJ = 25°C

C

Total Capacitance

VR = 0V

TJ = 25°C

120

pF

f = 1.0MHz

VR = 200V

TJ = 25°C

12

f = 1.0MHz

Notes

(4)

Indicative by the device design, not a production test.