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D25SC6M Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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D25SC6M Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schotty Barrier Diode D25SC6M www.iscsemi.com 1 FEATURES · Low VF · High Recovery Speed · Full Molded APPLICATIONS · Switching Power Supply (SPS) · Telecommunication · DC/DC Converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 60 V IF(AV) Average Rectified Forward Current 12.5×2 A IFSM Non-repetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 50Hz) 300 A TJ Max. Junction Temperature 175 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃ /W |
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Similar Description - D25SC6M |
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